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| LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX 500V RDS(ON) (max) 1.0K IDSS (min) 1.0mA Order Number / Package TO-236AB* LND250K1 Product marking for SOT-23: NDE where = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features ESD gate protection Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS Advanced DMOS Technology The LND2 is a high voltage N-channel depletion mode (normallyon) transistor utilizing Supertex's lateral DMOS technology. The gate is ESD protected. The LND2 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification. Applications Solid state relays Normally-on switches Converters Power supply circuits Constant current sources Input protection circuits Source Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSX BVDGX 20V -55C to +150C 300C Gate Drain TO-236AB (SOT-23) top view Note: See Package Outline section for dimensions. 12/13/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. LND250 Thermal Characteristics Package TO-236AB ID (continuous)* 13mA ID (pulsed) 30mA Power Dissipation @TA = 25C 0.36W C/W 200 jc C/W 350 ja IDR 13mA IDRM* 30mA * ID (continuous) is limited by max rated Tf. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSX VGS(OFF) IGSS ID(OFF) Parameter Drain-to-Source Breakdown Voltage Gate-to-Source OFF Voltage Min 500 -1.0 -3.0 5.0 100 100 100 IDSS RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Saturated Drain-to-Source Current Static Drain-to-Source ON-State Resistance 1.0 850 3.0 1K 1.2 1.0 2.0 7.5 2.0 0.5 0.09 0.45 0.1 1.3 0.9 200 V ns VGS = -10V, ISD = 1.0mA VGS = -10V, ISD = 1.0mA s 10 3.5 1.0 VDD = 25V, ID = 1.0mA, RGEN = 25 pF Typ Max Unit V V mV/C nA nA A mA %/C m Conditions VGS = -10V, ID = 1.0mA VDS = 25V, ID = 100nA VDS = 25V, ID = 100nA VGS = 20V, VDS = 0V VGS = -10V, VDS = 450V VGS = -10V, VDS = 0.8V max rating TA =125C VGS = 0V, VDS = 25V VGS = 0V, ID = 0.5mA VGS = 0V, ID = 0.5mA VGS = 0V, ID = 1.0mA VGS = -10V, VDS = 25V f = 1MHz VGS(OFF) Change in VGS(OFF) with Temperature Gate Body Leakage Current Drain-to-Source Leakage Current RDS(ON) Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V INPUT -10V 90% 10% t(ON) PULSE GENERATOR Rgen t(OFF) tr td(OFF) tF 10% td(ON) VDD OUTPUT 0V 10% INPUT 90% 90% (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 2 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com VDD RL OUTPUT D.U.T. 12/13/010 |
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